The role of plasma in plasma-enhanced atomic layer deposition of crystalline films

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Film growth by the atomic layer deposition (ALD) method relies on alternate pulsing of the precursor gases and vapors into a vacuum chamber and their subsequent chemisorption on the substrate surface (Fig. 1) [1,2]. The different steps in the process are saturative such that ALD film growth is self-limiting yielding one submonolayer of film per deposition cycle. ALD has some unique characterist...

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ژورنال

عنوان ژورنال: Journal of Vacuum Science & Technology A

سال: 2020

ISSN: 0734-2101,1520-8559

DOI: 10.1116/6.0000145